super fast recovery diode RF201L4S ? series ? dimensions (unit : mm) ? land size figure (unit : mm) standard fast recovery ? applications general rectification ? features 1)small power mold type. pmds ? structure 2)low switching loss 3)low forward voltage ? construction silicon epitaxial planer ? absolute maximum ratings (ti=25 ?c) symbol limits unit v rm 400 v v r 400 v tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit v f 0.95 1.2 v i r 0.01 1 a trr 20 30 ns thermal resistance rth(j-l) 23 c/w ? taping dimensions (unit : mm) parameter conditions average rectified forward current io reverse voltage repetitive peak reverse voltage junction temperature forward current surge peak i fsm 60hz half sin wave, non-repetitive one cycle peak value, tj=25c conditions parameter storage temperature junction to lead reverse recovery time reverse current i f =1.5a v r =400v i f =0.5a,i r =1a,irr=0.25i r forward voltage d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave tl=108c 1.5 a 50 a pmds 2.0 4.2 2.0 rohm : pmds jedec : sod-106 6 6 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 7 2 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max manufacture date 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RF201L4S 0.01 0.1 1 10 100 0 500 1000 1500 2000 2500 3000 forward voltage : v f (mv) v f - i f characteristics forward current : i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 0.1 1 10 100 1000 10000 0 100 200 300 400 tj=150 c tj=25 c tj=75 c tj=125 c reverse current : i r (na) reverse voltage : v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage : v r (v) v r - ct characteristics 800 850 900 950 1000 1050 1100 v f dispersion map forward voltage : v f (mv) ave:942.3mv tj=25 c i f =1.5a n=20pcs 1 10 100 1000 reverse current : i r (na) i r dispersion map tj=25 c v r =400v n=20pcs ave:9.6na 70 80 90 100 110 120 130 140 150 ave:114.6pf tj=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RF201L4S 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - l) 0 5 10 15 20 25 30 ave:20.1ns tj=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 20 40 60 80 100 120 140 160 ave:82.0a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current : i fsm (a) trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current : i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1000 1 10 100 t i fsm peak surge forward current : i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=100pf r=1.5k c=200pf r=0 ave:4.55kv ave:15.3kv electrostatic discharge test esd(kv) esd dispersion map time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) rth(j - a) on glass - epoxy substrate soldering land 2mm rth(j - a) on glass - epoxy substrate soldering land 10mm 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RF201L4S 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 0.5 1 1.5 2 2.5 0 30 60 90 120 150 d=0.2 d=0.1 d=0.05 d.c. d=0.5 half sin wave d=0.8 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =320v 0a 0v on glass - epoxy substrate soldering land 10mm 0 0.5 1 1.5 2 2.5 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tl( c ) derating curve (io - tl) t tj=150 c d=t/t t v r io v r =320v 0a 0v 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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